2014. 3. 31 1/2 semiconductor technical data kdv202e revision no : 4 fm radio band tuning application. features h high capacitance ratio : c 0.2v /c 2.3v =2.5(min.) h low series resistance : r s =0.6 ? (max.) h small package : esc. maximum rating (ta=25 ? ) 1. anode 2. cathode esc dim millimeters a b c d e 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 cathode mark d c b a 1 2 e f 0.13 0.05 f g + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ gg electrical characteristics (ta=25 ? ) variable capacitance diode silicon epitaxial planar diode type name marking characteristic symbol rating unit reverse voltage v r 6 v junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse current i r1 v r =6v - - 10 na i r2 v r =6v, tj=85 ? - - 100 capacitance c 0.2v v r =0.2v, f=1mhz 28.2 - 33.5 pf c 2.3v v r =2.3v, f=1mhz 7.2 - 11.2 capacitance ratio c 0.2v /c 2.3v - 2.5 - - series resistance r s c t =30pf, f=100mhz - 0.35 0.6 ? classification of capacitance ratio grade grade capacitance (c2.3v) unit mark (none) 7.2 q 11.2 pf fa a 7.2~8.7 f1 b 8.3 q 9.7 f2 c 9.3~10.7 f3 d 10.3~11.2 f4
2014. 3. 31 2/2 revision no : 4 kdv202e reverse current i (na) r t 0 junction temperature t ( c) j i - t rj 20 40 60 80 100 total capacitance c (pf) 0 1 10 reverse voltage v (v) r tr c - v 10 10 20 30 f=1mhz ta=25 c 40 -1 10 10 2
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